CD0.5A30

$2.30

Description：DIODE SCHOTTKY 30V 200MA DIE
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)

SKU:5e60f6d87d76 Category: Single Diodes Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：DIODE SCHOTTKY 30V 200MA DIE
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：30 V
Current - Average Rectified (Io)：200mA
Voltage - Forward (Vf) (Max) @ If：500 mV @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：10 µA @ 30 V
Capacitance @ Vr, F：50pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Operating Temperature - Junction：-65°C ~ 125°C
Grade：-
Qualification：-

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CD0.5A30

Overview

The CD0.5A30 is a small-signal Schottky diode manufactured by Microchip Technology, constructed using silicon technology. It belongs to the Schottky Diodes & Rectifiers product category and is supplied in bulk packaging. The component is identified by Mouser part number 579-CD0.5A30.

Feature Summary

Utilizes silicon-based Schottky barrier construction for rectification applications.

Applications

Procurement Notes

Verify the specific manufacturer datasheet for electrical ratings and handling instructions before integration. Confirm that the bulk packaging format aligns with assembly requirements. Check current availability status as supply levels may fluctuate. Ensure compliance with relevant environmental directives applicable to the deployment region.

Selection Notes

Select this component when a silicon small-signal Schottky diode in bulk form is required. Consider the package type and technology constraints during circuit design. Evaluate alternative packages if surface-mount or tape-and-reel formats are necessary for automated production lines.

Part Context

This device is part of Microchip Technology's discrete semiconductor portfolio, specifically within the diode and rectifier segment. It serves as a fundamental passive component for signal processing and power management circuits requiring low forward voltage drop characteristics typical of Schottky structures.