CD645

Overview

The CD645 is a standard silicon diode manufactured by Microchip Technology, designed for surface-mount applications in a die package. It features a maximum DC reverse voltage of 270 V and an average rectified current rating of 400 mA. The device exhibits a forward voltage of 1 V at 100 mA and a reverse leakage current of 50 nA at 225 V. Junction capacitance is specified as 20 pF at 4 V and 1 MHz. Operating temperatures range from -65°C to +175°C.

Feature Summary

• Junctions are completely protected with silicon dioxide
• Compatible with wire bonding and die attach techniques excluding solder reflow

Applications

• General purpose silicon diode circuits
• High-temperature electronic assemblies

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the die package format aligns with assembly capabilities, as solder reflow is not supported. Ensure thermal management strategies accommodate the wide operating temperature range during design validation.

Selection Notes

Select this component for designs requiring high reverse voltage tolerance and extended temperature operation. The die form factor necessitates specialized mounting processes compatible with wire bonding. Evaluate circuit requirements against the 400 mA current limit and 270 V blocking capability.

Part Context

This part belongs to Microchip's general-purpose silicon diode family, which includes models such as CD483B, CD485B, CD486B, and CD649. These components share common protection features and packaging constraints, serving as robust discrete solutions for power management and signal conditioning tasks.

Replacement Considerations

CD649 offers similar characteristics with higher voltage ratings.