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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 6.2A TO263
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：6.2A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 2 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 1200 V
- Capacitance @ Vr, F：136pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The CDBD2SC21200-G is a silicon carbide (SiC) Schottky diode manufactured by Comchip Technology. It features a single configuration in a D2PAK surface-mount package. Key electrical parameters include a repetitive reverse voltage of 1.2 kV and a forward current rating of 2 A. The device exhibits a maximum forward voltage of 1.62 V and a low reverse leakage current of 20 uA. It supports a non-repetitive forward surge current of 35 A and operates within a temperature range from -55°C to +175°C, with a power dissipation capacity of 53.2 W.
Feature Summary
- Utilizes silicon carbide material for high-temperature stability and efficiency
- Features ultra-low reverse leakage current characteristics
- Designed for surface mount installation in compact layouts
Applications
- High-frequency switching power supplies
- Uninterruptible power supply systems
- DC-DC converter circuits
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the D2PAK footprint matches your PCB design requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when high blocking voltage and wide bandgap performance are required. The SiC technology offers superior thermal handling compared to standard silicon alternatives. Consider the D2PAK package size for space-constrained applications requiring robust heat dissipation capabilities.
Part Context
This part belongs to the silicon carbide Schottky diode category from Comchip Technology. It is designed for high-voltage applications where traditional silicon rectifiers may suffer from higher losses or thermal limitations. The product line focuses on discrete semiconductors for power electronics.
Replacement Considerations
Consult official substitution guides for compatible SiC Schottky diodes with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values before replacing existing designs.
