CDBGBSC101200-G

Diode Arrays Overview

The CDBGBSC101200-G is a dual silicon carbide power Schottky diode array manufactured by Comchip Technology. It features a common cathode configuration housed in a TO-247-3 through-hole package. The device supports a repetitive reverse voltage of 1200 V and a DC forward current of 18 A. Key electrical parameters include a maximum forward voltage of 1.63 V, a reverse leakage current of 50 uA, and a non-repetitive peak forward surge current of 100 A. Constructed with silicon carbide material, it offers high-temperature stability and low conduction losses suitable for demanding power electronics applications.

Diode Arrays Feature Summary

• Dual common cathode configuration utilizing silicon carbide technology
• High voltage blocking capability up to 1200 V
• Low forward voltage drop for improved efficiency
• Robust thermal performance in TO-247-3 package

Diode Arrays Applications

• High-voltage DC-DC converters
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Diode Arrays Procurement Notes

Verify the specific suffix '-G' indicates lead-free compliance and RoHS adherence as per manufacturer standards. Confirm the TO-247-3 pinout matches the target PCB footprint, noting the common cathode arrangement. Ensure thermal management solutions are adequate for the 18 A continuous current rating. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when high voltage isolation and low switching losses are critical. The silicon carbide construction allows for higher operating temperatures compared to silicon alternatives. Consider the 100 A surge current rating for transient protection requirements. Evaluate the TO-247-3 package size against available board space and mounting constraints. Compare forward voltage characteristics against system efficiency targets.

Diode Arrays Part Context

This part belongs to Comchip Technology's silicon carbide power diode series, designed for high-efficiency power conversion. Unlike standard silicon rectifiers, these devices offer superior thermal conductivity and breakdown voltage. The dual common cathode design simplifies circuit topology for bridge or half-bridge configurations. It complements other Comchip SiC products like the CDBJSC101700-G for varied packaging needs.

Diode Arrays Replacement Considerations

Direct substitutes must match the 1200 V rating, 18 A current capacity, and TO-247-3 package. Verify that alternative dual common cathode SiC diodes maintain similar forward voltage and leakage specifications. Ensure thermal resistance values are comparable to prevent overheating in existing heatsink designs.