CDBJFSC101200-G

Overview

The CDBJFSC101200-G is a Silicon Carbide (SiC) Schottky barrier rectifier manufactured by Comchip Technology. It features a repetitive reverse voltage (VRRM) of 1200 V and an average forward current (IF) of 10 A. The device exhibits a maximum forward voltage drop (VF) of 1.63 V at rated current and a peak non-repetitive surge current (IFSM) of 100 A. Reverse leakage current (IR) is specified at 50 µA. Designed for high-temperature environments, it utilizes silicon carbide technology to ensure ultra-low reverse current and enhanced efficiency under thermal stress.

Feature Summary

• Utilizes Silicon Carbide (SiC) material for superior performance in high-temperature conditions
• Features ultra-low reverse leakage current to increase overall system efficiency
• Provides robust surge capability with high peak forward surge current rating
• Designed as a single-phase rectifier for reliable power conversion

Applications

• High-voltage industrial power supplies
• Uninterruptible Power Supplies (UPS)
• Industrial motor drives and inverters
• High-efficiency DC-DC converters

Procurement Notes

Verify the specific datasheet version when sourcing, as SiC parameters can vary slightly between manufacturing batches. Confirm that the TO-220-3 package dimensions match your thermal management design requirements. Ensure compatibility with through-hole mounting processes if integrating into existing PCB layouts designed for standard diode packages.

Selection Notes

Select this component when applications demand high blocking voltage combined with low switching losses typical of Schottky devices. The SiC construction makes it suitable where silicon-based alternatives would suffer from excessive leakage or thermal runaway. Consider the 1.63 V forward voltage drop for thermal calculations in high-current scenarios to ensure adequate heat sinking.

Part Context

This part belongs to Comchip's Silicon Carbide (SiC) series, which specializes in diodes performing well under high-temperature conditions. Unlike standard silicon rectifiers, these devices offer significantly reduced reverse current. The CDBJFSC101200-G specifically targets high-voltage applications requiring the reliability of SiC technology within a traditional through-hole package format.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.