CDBJFSC10650-G

Overview

The CDBJFSC10650-G is a Silicon Carbide (SiC) Schottky diode manufactured by Comchip Technology. It features a 650V reverse voltage rating and a continuous forward current of 10A in a TO-220F package. The device exhibits a maximum forward voltage drop of 1.78V at 10A and a low leakage current of 30µA at 650V. Power dissipation is rated at 39.4W, with a junction temperature range from -55°C to +175°C. This component is designed for high-efficiency power conversion applications requiring fast switching speeds.

Feature Summary

• Utilizes Silicon Carbide semiconductor material for superior thermal performance and high-temperature operation up to 175°C.
• Schottky barrier construction ensures minimal forward voltage drop and negligible reverse recovery charge for reduced switching losses.
• Through-hole TO-220F packaging facilitates efficient heat dissipation and robust mechanical mounting for industrial environments.

Applications

• High-frequency DC-DC converters
• Uninterruptible power supplies (UPS)
• Solar inverters and photovoltaic systems

Procurement Notes

Verify component authenticity through authorized distributors as the manufacturer has scheduled this part for obsolescence. Confirm that the received units match the specific CDBJFSC10650-G designation to ensure correct electrical specifications. Check for RoHS compliance markings on the package. Review available substitute options if long-term supply continuity is required for production planning.

Selection Notes

Select this component when designing circuits requiring high-voltage blocking capability combined with low conduction losses. The TO-220F package is suitable for applications where thermal management can be handled via heatsinking. Ensure the operating junction temperature remains within the specified limits to maintain reliability. Consider the 10A current rating against peak load requirements to prevent overstress during transient conditions.

Part Context

This device belongs to Comchip Technology's Silicon Carbide Schottky diode series, which targets high-power density applications. The CDBJFSC10650-G specifically addresses needs for efficient rectification in medium-power converters. Its silicon carbide composition differentiates it from traditional silicon diodes by offering higher breakdown voltages and better thermal conductivity.

Replacement Considerations

The manufacturer has indicated this part is scheduled for obsolescence. Designers should evaluate alternative SiC Schottky diodes with compatible 650V ratings and similar current capabilities. Verify pinout compatibility and thermal resistance values before substituting to ensure circuit performance remains unaffected.