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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 3A TO220F
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 3 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：190pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2 Full Pack
- Supplier Device Package：TO-220F
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The CDBJFSC3650-G is a Schottky Barrier Rectifier manufactured by Comchip Technology. It utilizes silicon epitaxial planar chip technology with a metal-silicon junction to ensure ultra-high-speed switching and high surge capability. The device features low forward voltage drop, low power loss, and high efficiency, making it suitable for low-profile surface-mounted applications designed to optimize board space.
Feature Summary
- Batch process design providing excellent power dissipation and improved thermal resistance
- Low profile package structure that is significantly thinner than standard SOD-123 dimensions
- Guarding functionality for overvoltage protection alongside high current capability
Applications
- Low profile surface mounted applications requiring optimized board space
- General purpose rectification in electronic circuits
- Overvoltage protection guarding in power systems
Procurement Notes
Verify the specific part number against official manufacturer documentation to confirm availability and exact specifications. Ensure compliance with environmental standards such as MIL-STD-19500/228 for lead-free requirements. Cross-reference datasheets for precise electrical ratings before integration into designs.
Selection Notes
Select this component for applications demanding ultra-high-speed switching and low forward voltage drop. Consider its low profile package when board space optimization is critical. Evaluate thermal resistance and reverse leakage current characteristics to ensure suitability for the intended operating environment.
Part Context
This component belongs to the CDBMH Series of Schottky Barrier Rectifiers from Comchip Technology. The series is characterized by batch process design and silicon epitaxial planar chips. These devices are engineered for high efficiency and low power loss in surface-mounted configurations.
