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Product Detailed Parameters
- Description：DIODE SIL CARBIDE 650V 5A TO220F
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：5A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：100 µA @ 650 V
- Capacitance @ Vr, F：430pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2 Full Pack
- Supplier Device Package：TO-220F
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The CDBJFSC5650-G is a Silicon Carbide (SiC) Power Schottky Diode manufactured by Comchip Technology. It features a repetitive reverse voltage of 650 V and a forward current capability exceeding 500 mA. The device exhibits a forward voltage of 1.35 V at 5 A and supports a forward surge current of 60 A. With a maximum operating temperature of +175 °C and a reverse leakage current of 10 uA, it utilizes a TO-220F package.
Feature Summary
- Utilizes silicon carbide material for superior thermal performance and high-temperature operation up to 175 °C
- Features ultra-fast switching characteristics with no recovery time due to Schottky barrier construction
- Designed for low forward voltage drop to enhance efficiency in power conversion applications
Applications
- High-frequency inverters
- Polarity protection circuits
- Free-wheeling diode applications
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's latest documentation before procurement. Confirm that the TO-220F lead form matches the target PCB footprint requirements. Ensure compliance with RoHS standards as indicated in official product specifications. Cross-reference the part number with authorized distributors to confirm availability and authenticity.
Selection Notes
Select this component for designs requiring high-temperature stability and fast switching speeds. The SiC technology offers advantages over silicon in terms of thermal resistance and reverse leakage current. Consider the TO-220F package for through-hole mounting solutions where moderate current handling is sufficient. Evaluate the 650 V rating against peak circuit voltages to ensure adequate safety margins.
Part Context
This component belongs to Comchip Technology's silicon carbide diode portfolio, designed for modern power electronics. It represents a shift towards wide-bandgap semiconductors to improve energy efficiency. The TO-220F form factor provides a balance between thermal dissipation capabilities and standard mounting compatibility for various industrial and consumer electronic devices.
Replacement Considerations
Publicly confirmed substitute part numbers include G3S06505H and G3S06506H. Verify pinout compatibility and electrical parameter equivalence before substitution.
