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CDBV3-40A-G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Comchip Technology. Its product description is DIODE ARR SCHOT 40V 200MA SOT323. Review the specifications below when checking this part for your BOM.
The CDBV3-40A-G is a dual series Schottky barrier rectifier manufactured by Comchip Technology. It features a silicon epitaxial planar chip construction with a metal-silicon junction, designed for surface-mount applications in the SOD-882 package. The device provides a repetitive peak reverse voltage (VRRM) of 40 V and an average forward current (IF) of 40 mA per diode. Key electrical characteristics include a maximum forward voltage drop (VF) of 1 V at rated current, a low reverse leakage current (IR) of 200 nA, and a non-repetitive peak forward surge current (IFSM) capability of 600 mA. It operates reliably within a junction temperature range of -55°C to +125°C.
Verify the specific suffix 'A' against the official Comchip Technology datasheet to confirm pinout orientation and marking codes. Ensure the selected component matches the required SOD-882 footprint dimensions. Confirm RoHS compliance status directly from the manufacturer's documentation before finalizing procurement specifications.
Select this component when a dual Schottky configuration is required in a minimal footprint. The 40 mA rating suits low-power signal paths rather than high-current power delivery. Compare the 1 V forward voltage against alternatives if lower conduction losses are critical for the specific application design.
This part belongs to the CDBV3 series of small signal Schottky diodes from Comchip Technology. The series utilizes silicon epitaxial planar chips optimized for low capacitance and fast switching. It complements other Comchip rectifiers like the CDBUR0340, offering a dual-channel solution compared to single-diode packages.
The maximum operating junction temperature is +125°C.
The CDBV3 series typically utilizes a common cathode configuration for the dual diodes.
The maximum reverse leakage current is specified as 200 nA.
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