CDF56G6517N TR13 PBFREE

$4.79

Description：650V, 17A, N-CHANNEL GAN FET IN
Series：*
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5baa339bb7b Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：650V, 17A, N-CHANNEL GAN FET IN
Series：*
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：-
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerVDFN

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CDF56G6517N TR13 PBFREE

Overview

The CDF56G6517N is a surface-mount N-Channel Gallium Nitride (GaN) power field-effect transistor manufactured by Central Semiconductor. It features a DFN5X6A package and is rated for a drain-source voltage of 650 V and a continuous drain current of 17 A at 25°C case temperature. The device exhibits a maximum on-resistance of 140 mΩ and a total gate charge of 3.5 nC. Operating temperatures range from -55°C to +150°C, with a power dissipation capacity of 113 W under controlled thermal conditions.

Feature Summary

High voltage capability combined with low on-resistance for optimal efficiency
Low gate charge characteristics enabling fast switching performance
Designed specifically for high voltage soft switching applications

Applications

Switch-mode power supplies
High power chargers
Electric vehicle inverters

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The PBFREE designation indicates lead-free compliance. Confirm that the required quantity aligns with standard factory packaging configurations. Ensure thermal management designs account for the specified power dissipation limits in the target application environment.

Selection Notes

Select this component for circuits requiring high-voltage handling with minimal switching losses. The low gate charge supports efficient drive requirements in high-frequency topologies. Evaluate thermal resistance parameters to ensure junction temperatures remain within the specified operational range during peak load conditions.

Part Context

This part belongs to the Central Semiconductor family of GaN FETs designed for modern power electronics. It utilizes a DFN5X6A surface mount package to facilitate compact board layouts. The technology leverages wide bandgap properties to outperform traditional silicon devices in high-efficiency conversion stages.