CDFG6558N TR13 PBFREE

$8.57

Description：SURFACE MOUNT MOSFET
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:40a52bbc1c22 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：SURFACE MOUNT MOSFET
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：80mOhm @ 8A, 6V
Vgs(th) (Max) @ Id：2.5V @ 30.7mA
Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 0 V
Vgs (Max)：+7V, -6V
Input Capacitance (Ciss) (Max) @ Vds：225 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta), 188W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (8x8)
Package / Case：8-VDFN Exposed Pad

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CDFG6558N TR13 PBFREE

Overview

The Central Semiconductor CDFG6558N is a surface-mount N-Channel Gallium Nitride (GaN) power field-effect transistor. It features a 650V drain-source voltage rating and supports a continuous drain current of 29A at 25°C case temperature, with a pulsed current capacity of 58A. The device utilizes a DFN8X8 package and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum on-resistance of 80mΩ at VGS=6.0V and ID=8.0A, a gate charge of 6.2nC, and switching times of 4ns for both rise and fall periods.

Feature Summary

High voltage capability combined with low on-resistance and gate charge for optimal efficiency
Fast switching performance suitable for high-frequency applications
Designed specifically for soft switching environments

Applications

Switch-mode power supplies
High power chargers
Electric vehicle inverters

Procurement Notes

Verify the specific ordering suffix PBFREE confirms lead-free plating status as defined by manufacturer standards. Confirm the TR13 designation aligns with required reel packaging specifications for automated assembly processes. Ensure compatibility with the DFN8X8 mechanical outline dimensions during PCB layout design. Cross-reference datasheet revision R1 dated May 9, 2024, for accurate parameter values.

Selection Notes

Select this component for designs requiring high-voltage GaN technology with low switching losses. The depletion mode operation requires appropriate gate drive circuitry capable of negative voltage levels down to -6.0V. Evaluate thermal management strategies given the power dissipation ratings of 188W at case temperature versus 1.1W at ambient temperature. Consider the Kelvin source pin configuration for accurate gate control in high-current scenarios.

Part Context

This part belongs to the Central Semiconductor family of surface-mount GaN N-Channel Power FETs. It is engineered to replace traditional silicon MOSFETs in high-efficiency power conversion stages. The DFN8X8 case provides a compact footprint while maintaining robust thermal performance for demanding power electronics applications.