CDM2206-800LR SL PBFREE

CDM2206-800LR SL PBFREE

$0.67
  • Description:MOSFET N-CH 800V 6A TO220
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube

SKU:8731731c67a0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 800V 6A TO220
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:950mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24.3 nC @ 10 V
  • Vgs (Max):30V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Download product information

CDM2206-800LR SL PBFREE

Overview

The Central Semiconductor CDM2206-800LR SL PBFREE is an N-channel power MOSFET in a TO-220 package. It features an 800V drain-source voltage and a continuous drain current of 6.0A at 25°C, dropping to 4.0A at 100°C case temperature. The device has a maximum gate-source voltage of 30V and a typical on-resistance of 0.95Ω at VGS=10V and ID=3.0A. Total gate charge is typically 24.3nC. Power dissipation reaches 110W with a thermal resistance junction-to-case of 1.14°C/W. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

  • High voltage capability up to 800V for robust operation
  • Ultra-low on-resistance for optimal efficiency
  • Low gate charge for fast switching performance

Applications

  • Power Factor Correction (PFC)
  • Alternative energy inverters
  • Solid State Lighting (SSL)

Procurement Notes

Verify the End-of-Life status before procurement. This component is classified as End of Life with no direct replacement available from the manufacturer. Orders are restricted to existing stock only. Confirm final shipment dates and minimum order quantities with the supplier or sales representative prior to placing orders.

Selection Notes

Select this component for high-voltage applications requiring fast switching speeds. Ensure the design accommodates the 800V breakdown voltage and 6.0A steady-state current limits. Verify that the thermal management system can handle the 110W power dissipation rating within the specified operating temperature range.

Part Context

This part belongs to the CDM2206 series of N-channel LR Power MOSFETs manufactured by Central Semiconductor Corp. It utilizes a silicon technology optimized for high voltage and low on-resistance. The product line targets industrial and consumer electronics requiring efficient power conversion.

Replacement Considerations

No official replacement part numbers are provided by the manufacturer. The datasheet indicates 'N/A' for replacements. Users must source alternative components independently or contact [email protected] for technical assistance in locating alternate sources.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 24A with a pulse width of 10μs.

Is there a body diode included in this MOSFET?

Yes, the device includes a body diode with a continuous source current of 6.0A and a maximum pulsed source current of 24A.

CDM2206-800LR SL PBFREECDM2206-800LR SL PBFREE
$0.67
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