CDM2206-800LR

Description：MOSFET N-CH 800V 6A TO220
Series：-
Mfr：Central Semiconductor Corp
Package：Tube

SKU:a324a732f81c Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 800V 6A TO220
Series：-
Mfr：Central Semiconductor Corp
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24.3 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：474.7 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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CDM2206-800LR

Overview

The CDM2206-800LR is an N-channel power MOSFET in a TO-220 package, rated for 800V drain-source voltage and 6.0A continuous drain current at 25°C. It features a typical on-resistance of 0.95Ω at 10V gate drive and 3.0A. The device supports a maximum pulsed drain current of 24A and dissipates up to 110W with a junction-to-case thermal resistance of 1.14°C/W. Gate charge is typically 24.3nC, and the body diode reverse recovery time is 398.6ns.

Feature Summary

High voltage capability with 800V breakdown rating
Ultra-low on-resistance for optimal efficiency
Low gate charge for fast switching performance

Applications

Power Factor Correction (PFC)
Alternative energy inverters
Solid State Lighting (SSL)

Procurement Notes

Verify component authenticity through authorized Central Semiconductor channels or certified distributors. Confirm the specific marking code CDM06-800LR matches the physical device. Review the manufacturer's limitations and damages disclaimer prior to integration. Ensure thermal management design aligns with the specified junction temperature range of -55°C to +150°C.

Selection Notes

Select this component for high-voltage applications requiring efficient switching. Evaluate the 0.95Ω on-resistance against system conduction loss requirements. Consider the 24.3nC total gate charge for driver capability assessment. Verify that the TO-220 package thermal characteristics meet the heat dissipation needs of the target circuit environment.

Part Context

This part belongs to Central Semiconductor's LR Power MOSFET series designed for high-voltage, fast-switching environments. The product line emphasizes combining high voltage tolerance with low threshold voltage and low gate charge. The CDM2206-800LR specifically targets power conversion and lighting applications where efficiency is critical.

Replacement Considerations

Official documentation lists no direct replacement part numbers for the CDM2206-800LR. The manufacturer indicates availability is limited to existing stock only. Contact engineering support for potential alternate source recommendations if inventory is exhausted.