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The Central Semiconductor CDM2208-800FP is an N-channel silicon power MOSFET rated for 800V drain-source voltage and 8.0A continuous drain current in a TO-220FP package. It features a maximum gate-source voltage of 30V, a typical on-resistance of 1.42Ω at 10V gate drive, and a total gate charge of 24.45nC. The device supports a junction temperature range from -55°C to +150°C with a thermal resistance (junction-to-case) of 2.19°C/W.
Verify the specific ordering suffix required for your application. The PBFREE designation indicates lead-free plating, while TIN/LEAD indicates tin-lead plating. Confirm availability status as this component may be subject to discontinuation notices or stock-only classifications by the manufacturer.
Select this component for high-voltage switching applications requiring low gate charge and fast switching speeds. Ensure the design accommodates the specified thermal resistance and maximum pulsed drain current limits under the intended operating conditions.
This part belongs to the CDM2208 series of N-channel power MOSFETs manufactured by Central Semiconductor Corp. It is designed for high-voltage, fast-switching environments where efficiency is critical.
Official documentation lists no direct replacement part numbers for the CDM2208-800FP. Contact [email protected] for assistance locating alternate sources if necessary.
The maximum single pulse avalanche energy is 534 mJ.
The reverse transfer capacitance (Crss) is typically 2.7 pF.