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Product Detailed Parameters
- Description：MOSFET N-CH 650V 4A DPAK
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.7Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.4 nC @ 10 V
- Vgs (Max)：30V
- Input Capacitance (Ciss) (Max) @ Vds：463 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：620mW (Ta), 77W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The CDM4-650 TR13 PBFREE is a N-channel Power MOSFET manufactured by Central Semiconductor Corp, designed for power factor correction (PFC) applications. It features a drain-source voltage rating of 650V and a gate-source voltage limit of 30V. The device exhibits a low gate charge of 3.0nC and an on-resistance of 2.44 Ohms. Packaged in a surface-mount configuration, this component supports high-efficiency switching operations within its specified electrical parameters.
Feature Summary
- Optimized for power factor correction circuits
- Low gate charge for efficient switching
- High voltage capability for robust operation
Applications
- Power factor correction stages
- High-voltage switching applications
- Industrial power supplies
Procurement Notes
Verify the exact package type and pinout against the official datasheet before integration. Confirm that the 30V gate-source rating aligns with your driver circuit capabilities. Ensure thermal management solutions are adequate for the specified on-resistance and current conditions during operation.
Selection Notes
Select this component when a 650V N-channel MOSFET with low gate charge is required for PFC designs. Compare the 2.44 Ohm on-resistance against system efficiency targets. Verify compatibility with existing PCB footprints and ensure the operating temperature range meets environmental requirements.
Part Context
This part belongs to Central Semiconductor's discrete MOSFET lineup, specifically targeting high-voltage power management solutions. The 'TR13' suffix indicates tape and reel packaging for automated assembly. It complements other high-voltage devices in the manufacturer's portfolio for industrial and consumer electronics power stages.
Replacement Considerations
Check for direct substitutes with identical 650V ratings and similar on-resistance values. Verify pin compatibility if replacing in existing designs. Consider alternatives from other manufacturers offering comparable gate charge and thermal performance metrics.
