CDMSJ22013.8-650 SL

$2.69

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube

SKU:2d820b9c5555 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：1040 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：35.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FP
Package / Case：TO-220-3 Full Pack

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CDMSJ22013.8-650 SL

Overview

The CDMSJ22013.8-650 is an N-channel Super Junction MOSFET rated for 650V drain-source voltage and 13.8A continuous drain current at 25°C. It features a maximum on-resistance of 280mΩ at VGS=10V and ID=4.4A, with a gate charge of 30nC. The device operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220FP package.

Feature Summary

High voltage capability with 650V breakdown
Low on-resistance for efficient power handling
Low gate charge for fast switching performance

Applications

Power Factor Correction (PFC)
TV Power supplies
Uninterruptible Power Supplies (UPS)
PD Chargers
Adapters

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options, such as Tin/Lead or Lead-Free finishes. Ensure the requested part number matches the exact electrical ratings and package type required for the design. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement specifications.

Selection Notes

Select this component for high-voltage applications requiring low conduction losses and rapid switching speeds. The Super Junction technology provides an optimal balance between RDS(on) and gate charge. Consider thermal management requirements, as continuous current drops significantly at elevated case temperatures compared to room temperature ratings.

Part Context

This device belongs to Central Semiconductor's Super Junction MOSFET family, designed specifically for high-efficiency power conversion. It utilizes advanced semiconductor architecture to achieve superior performance metrics compared to traditional planar MOSFETs in similar voltage classes.

Replacement Considerations

Consult official substitution guides for verified equivalents. Do not assume pin compatibility or electrical equivalence with other 650V MOSFETs without verifying datasheet parameters.