CDMSJ2204.7-650 SL

CDMSJ2204.7-650 SL

$1.64
  • Description:SUPER JUNCTION MOSFETS
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube

SKU:733ad78a8d03 Category: Brand:

  
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Product Detailed Parameters

  • Description:SUPER JUNCTION MOSFETS
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:990mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 10 V
  • Vgs (Max):30V
  • Input Capacitance (Ciss) (Max) @ Vds:306 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):22.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220FP
  • Package / Case:TO-220-3 Full Pack

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CDMSJ2204.7-650 SL

Overview

The CDMSJ2204.7-650 is a 650 V N-channel Super Junction MOSFET in a TO-220FP package. It supports 4.7 A continuous drain current and 9.5 A pulsed current. Key electrical parameters include a maximum on-resistance of 990 mΩ at VGS=10V, a gate charge of 9.7 nC, and a threshold voltage range of 2 V to 4 V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Super Junction architecture for high voltage capability
  • Low gate charge for fast switching efficiency
  • Insulated TO-220FP package design

Applications

  • Power Factor Correction (PFC)
  • TV Power supplies
  • Uninterruptible Power Supplies (UPS)
  • PD Chargers
  • Adapters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation if plating variations are required. Standard devices are lead-free; Tin/Lead options require explicit suffix addition. Confirm package type matches the TO-220FP outline before procurement.

Selection Notes

Select this component for applications requiring 650 V blocking voltage with moderate current handling up to 4.7 A. The low gate charge makes it suitable for high-frequency switching environments like PFC circuits. Ensure thermal management accommodates the specified power dissipation limits.

Part Context

This part belongs to Central Semiconductor's N-channel Super Junction MOSFET lineup. It is designed to replace standard MOSFETs in high-voltage applications where lower conduction losses and faster switching speeds are critical for system efficiency.

Replacement Considerations

Check datasheets for alternative Super Junction MOSFETs with similar VDS ratings (650V) and RDS(on) values. Verify pinout compatibility with the TO-220FP package to ensure direct replacement without PCB redesign.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDS) is rated at 650 V.

Does this device support lead-free plating by default?

Yes, standard devices are lead-free. To request Tin/Lead plating, the 'TIN/LEAD' suffix must be added to the part number during ordering.

CDMSJ2204.7-650 SLCDMSJ2204.7-650 SL
$1.64
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