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The CDMSJ2204.7-650 is a 650 V N-channel Super Junction MOSFET in a TO-220FP package. It supports 4.7 A continuous drain current and 9.5 A pulsed current. Key electrical parameters include a maximum on-resistance of 990 mΩ at VGS=10V, a gate charge of 9.7 nC, and a threshold voltage range of 2 V to 4 V. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's documentation if plating variations are required. Standard devices are lead-free; Tin/Lead options require explicit suffix addition. Confirm package type matches the TO-220FP outline before procurement.
Select this component for applications requiring 650 V blocking voltage with moderate current handling up to 4.7 A. The low gate charge makes it suitable for high-frequency switching environments like PFC circuits. Ensure thermal management accommodates the specified power dissipation limits.
This part belongs to Central Semiconductor's N-channel Super Junction MOSFET lineup. It is designed to replace standard MOSFETs in high-voltage applications where lower conduction losses and faster switching speeds are critical for system efficiency.
Check datasheets for alternative Super Junction MOSFETs with similar VDS ratings (650V) and RDS(on) values. Verify pinout compatibility with the TO-220FP package to ensure direct replacement without PCB redesign.
The maximum Drain-Source Voltage (VDS) is rated at 650 V.
Yes, standard devices are lead-free. To request Tin/Lead plating, the 'TIN/LEAD' suffix must be added to the part number during ordering.