CDMSJ2207.3-650 SL

$2.27

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube

SKU:193d09251c23 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：554 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：32W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FP
Package / Case：TO-220-3 Full Pack

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CDMSJ2207.3-650 SL

Overview

The CDMSJ2207.3-650 SL is an N-channel Super Junction MOSFET manufactured by Central Semiconductor Corp, designed for high voltage and fast switching applications. It features a drain-source voltage (VDS) of 650 V and a continuous drain current (ID) of 7.3 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 600 mΩ at VGS=10V and ID=2.1A. Key electrical parameters include a gate charge (Qg) of 17 nC, threshold voltage (VGS(th)) ranging from 2 V to 4 V, and a power dissipation rating of 32 W. The component operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220FP package.

Feature Summary

High voltage capability with a 650 V drain-source breakdown voltage.
Low gate charge characteristics enabling efficient fast switching performance.
Super Junction technology providing low on-resistance relative to voltage rating.

Applications

Power Factor Correction (PFC)
TV Power supplies
Uninterruptible Power Supplies (UPS)
PD Chargers
Adapters

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options, as standard availability may vary between lead-free and tin/lead configurations. Confirm package type matches the TO-220FP outline provided in the datasheet. Ensure thermal management requirements align with the specified power dissipation ratings at relevant case temperatures.

Selection Notes

Select this component for designs requiring robust 650 V blocking capability combined with moderate current handling up to 7.3 A. The low gate charge supports high-frequency operation suitable for modern power conversion topologies. Evaluate thermal constraints carefully, as continuous current drops significantly at elevated case temperatures compared to room temperature ratings.

Part Context

This part belongs to the CDMSJ series of N-channel Super Junction MOSFETs from Central Semiconductor. The series targets high-efficiency power electronics where reduced switching losses and conduction losses are critical. The specific model denotes a 7.3 Ampere current rating within the 650 Volt family.