CE2F3P-T-AZ

Overview

The CE2F3P-T-AZ is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Renesas Electronics. It integrates internal biasing resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage rating of 60 V and a continuous collector current capacity of 2 A. With a power dissipation rating of 1 W, it is suitable for through-hole applications. The component utilizes an SIP-3 package configuration, providing a compact solution for medium-speed switching tasks in electronic systems requiring reliable digital control.

Feature Summary

• Integrates built-in biasing resistors to streamline circuit architecture
• Designed for medium-speed switching operations
• Utilizes SIP-3 through-hole packaging for board mounting

Applications

• Medium-speed switching circuits
• Digital logic interface stages
• General-purpose transistor switching applications

Procurement Notes

Verify the specific manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the SIP-3 package type matches the intended PCB footprint requirements. Check for RoHS compliance status as indicated in the product attributes. Ensure that the electrical ratings align with the system's voltage and current demands before integration into the final design.

Selection Notes

Select this component when a single NPN transistor with integrated biasing is required for medium-speed switching. The 60 V and 2 A ratings define the operational limits for collector-emitter voltage and current. Consider the SIP-3 through-hole package for assembly methods compatible with standard leaded components. Evaluate the 1 W power dissipation capability against thermal management constraints in the target application environment.

Part Context

This component belongs to the category of pre-biased bipolar transistors offered by Renesas Electronics. It combines a BJT die with internal resistors to form a single functional unit. The product line targets applications needing simplified driver circuits. The specific model designation identifies the NPN configuration and its electrical characteristics within the broader portfolio of discrete semiconductor devices available from the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the available documentation. Verify compatibility with alternative pre-biased NPN transistors by matching the 60 V voltage rating, 2 A current capacity, and SIP-3 package dimensions. Consult official Renesas resources for approved cross-reference information.