CEDM7004 TR PBFREE

$0.66

Description：MOSFET N-CH 30V 1.78A SOT883
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:38fa2f4eed35 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 1.78A SOT883
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.78A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.79 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-883
Package / Case：SC-101, SOT-883

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CEDM7004 TR PBFREE

Overview

The CEDM7004 TR PBFREE is a surface-mount N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features a low profile SOT-883L package with a maximum height of 0.40 mm. Key electrical parameters include a drain-source voltage rating of 30 V, a continuous drain current of 1.78 A at 25°C case temperature, and a power dissipation capacity of 100 mW. The component operates within a junction temperature range of -65 to +150 °C.

Feature Summary

ESD protection up to 2kV
Logic level compatible operation
Low on-resistance characteristics
Small leadless surface mount package

Applications

Load/Power switches
Power supply converter circuits
Battery powered portable devices

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'PBFREE' designation indicates lead-free plating options as defined by manufacturer standards. Confirm the exact package variant, such as SOT-883L or SOT-883VL, if dimensional constraints are critical. Ensure compatibility with RoHS regulations if required by the end application. Cross-reference datasheet revision dates during procurement to ensure accurate parameter data.

Selection Notes

Select this component for designs requiring compact surface-mount solutions with low threshold voltage capabilities. The logic-level compatibility allows direct interfacing with standard digital control signals. Evaluate thermal management requirements carefully due to the 100 mW power dissipation limit in the small form factor. Consider the complementary P-channel device, CEDM8004, for bridge or push-pull configurations.

Part Context

This part belongs to the CEDM series of surface-mount silicon N-channel enhancement-mode MOSFETs from Central Semiconductor Corp. The series is engineered using an N-Channel DMOS process optimized for high-speed switching performance. The CEDM7004 specifically targets applications demanding low profile packaging and efficient power handling within minimal board space constraints.

Replacement Considerations

The official complementary P-channel substitute is the CEDM8004. Verify pinout compatibility and electrical ratings against existing circuit requirements before substituting with components from other manufacturers.