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Product Detailed Parameters
- Description：MOSFET P-CH 30V 450MA SOT883VL
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.88 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：55 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883VL
- Package / Case：SC-101, SOT-883
Download product information
Overview
The CEDM8004 is a surface-mount silicon P-channel enhancement-mode MOSFET manufactured using a DMOS process. It features a maximum drain-source voltage of 30V and a continuous drain current of 450mA. The device operates within a junction temperature range of -65°C to +150°C with a power dissipation of 100mW. Electrical characteristics include a gate-source threshold voltage of 1.0V (max) at 250µA, an on-resistance of 1.1Ω at VGS=4.5V, and a total gate charge of 0.88nC.
Feature Summary
- ESD protection up to 2kV
- Logic level compatible operation
- Low package profile of 0.4mm
- Small leadless surface mount package
Applications
- Load/Power switches
- Power supply converter circuits
- Battery powered portable devices
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The standard designation indicates lead-free construction. Confirm availability through authorized distributors as manufacturing schedules may vary. Ensure the component meets RoHS compliance requirements for your specific assembly process before finalizing procurement orders.
Selection Notes
Select this component for high-speed pulsed amplifier and driver applications requiring low on-resistance and low threshold voltage. The SOT-883L package is suitable for space-constrained designs. Consider the complementary N-channel CEDM7004 for bridge configurations. Evaluate thermal resistance parameters for heat dissipation in enclosed environments.
Part Context
This part belongs to Central Semiconductor's UltraMini series of small signal MOSFETs. It utilizes the SOT-883L case configuration, which provides a compact footprint for surface mounting. The device is designed for general-purpose switching tasks where low power consumption and fast switching speeds are prioritized over high current handling capabilities.
Replacement Considerations
The datasheet identifies the CEDM7004 as the complementary N-channel device. No other direct substitute part numbers are documented in the provided source material.
