CGD65A130SH2

$6.42

Description：650V GAN HEMT, 130MOHM, DFN8X8.
Series：ICeGaN™
Mfr：Cambridge GaN Devices
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6eed5d85f318 Category: Single FETs, MOSFETs Brand: Cambridge GaN Devices

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Product introduction

Product Detailed Parameters

Description：650V GAN HEMT, 130MOHM, DFN8X8.
Series：ICeGaN™
Mfr：Cambridge GaN Devices
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：12A
Drive Voltage (Max Rds On, Min Rds On)：12V
Rds On (Max) @ Id, Vgs：182mOhm @ 900mA, 12V
Vgs(th) (Max) @ Id：4.2V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs：1.9 nC @ 12 V
Vgs (Max)：+20V, -1V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：16-DFN (8x8)
Package / Case：16-PowerVDFN

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CGD65A130SH2

Overview

The CGD65A130SH2 is an enhancement mode GaN-on-silicon power transistor from the H2 series, rated for a drain-to-source voltage of 650 V and a continuous drain current of 12 A. It features an on-state resistance (RDS(on)) of 130 mΩ at VGS = 12 V. The device utilizes ICeGaN gate technology with a recommended drive voltage range of 9 V to 20 V. It incorporates an integrated NL3 circuit for improved light-load efficiency and a built-in current sense function. Packaged in a bottom-side cooled DFN 8x8 mm SMD format, it supports high-frequency switching applications.

Feature Summary

ICeGaN gate technology providing broad gate voltage window and excellent robustness
Integrated NL3 circuit designed to boost no-load and light-load efficiency
Built-in current sense function eliminating the need for external source resistors
Integrated Miller clamp ensuring reliable 0 V turn-off

Applications

USB PD and fast charging systems
AC adapters and notebook adapters
Totem pole and single-switch PFC converters
LLC and high frequency DC/DC converters
Class-D Audio amplifiers

Procurement Notes

Verify component authenticity by checking package markings against official datasheet specifications. Confirm ordering codes match the required packaging form, such as tape-and-reel quantities. Ensure compatibility with local environmental regulations and recycling requirements before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring high switching frequencies and efficient thermal management via bottom-side cooling. The integrated current sensing capability simplifies protection circuits by removing the need for separate sense resistors. Verify that the gate driver can support the specified 9 V to 20 V operating range for optimal performance.

Part Context

This device belongs to the H2 series of GaN power switches manufactured by Cambridge GaN Devices. It is designed to leverage the material properties of Gallium Nitride for high breakdown voltage and high current capabilities. The series targets modern power electronics demanding compact footprints and superior thermal performance.