CLA4602-000

RF Diode Overview

The CLA4602-000 is a silicon PIN limiter diode chip designed for passive receiver protection across frequencies from 100 MHz to over 30 GHz. It features a mesa construction with a 1 µm intrinsic region base width, providing low capacitance and fast response characteristics suitable for low-level and cleanup applications. The device supports a reverse voltage range of 15 V to 30 V and a maximum forward current of 200 mA. Electrical specifications include a typical junction capacitance of 0.20 pF at 0 V bias and a series resistance of 2.0 Ω measured at 10 mA. Thermal performance allows for power dissipation up to 0.51 W under pulsed conditions.

RF Diode Feature Summary

• Mesa-constructed design optimized for low-level and cleanup limiter applications
• Ultra-low spike leakage power for enhanced signal integrity
• Tight control of I-layer base width for consistent limiting action
• Capable of peak power handling up to +74 dBm

RF Diode Applications

• LNA receiver protection
• Commercial radar systems
• Defense radar systems

RF Diode Procurement Notes

Verify the specific lot date code and RoHS compliance status against the manufacturer's Certificate of Conformance prior to procurement. Confirm that the waffle pack carrier handling procedures are strictly followed during storage and assembly to prevent mechanical damage to the bare die. Ensure electrostatic discharge precautions are implemented throughout the supply chain.

RF Diode Selection Notes

Select this component when designing multi-stage limiter circuits requiring low insertion loss and fast recovery times. The CLA4602-000 is specifically intended for cleanup stages due to its thin base width and low capacitance profile. Compare its 1 µm I-region thickness against thicker planar alternatives if higher average power handling is required instead of peak sensitivity.

RF Diode Part Context

This part belongs to the Skyworks CLA Series of silicon limiter diodes, which includes eleven individual chip designs. These devices utilize established silicon technology to achieve high resistivity and tightly controlled base widths. The series accommodates various multi-stage limiter applications through distinct mesa and planar configurations tailored for different power levels and frequency ranges.

RF Diode Replacement Considerations

The CLA4601-000 serves as a similar alternative within the same series, featuring comparable mesa construction but with slightly different capacitance and thermal parameters. Designers should verify that the replacement maintains the required breakdown voltage range and junction capacitance for the specific limiter stage application.