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Product Detailed Parameters
- Description：IGBT MOD 1400V 100A 780W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：4.2V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1400 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：780 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：20 nF @ 10 V
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Overview
The CM100DY-28H is a Dual IGBTMOD™ H-Series power module manufactured by Powerex, Inc. It features two N-channel IGBT transistors in a half-bridge configuration with reverse-connected super-fast recovery free-wheel diodes. The device has a collector-emitter voltage rating of 1400V and a continuous collector current of 100A. Key electrical parameters include a maximum junction temperature of 150°C, a gate-emitter voltage limit of ±20V, and a peak collector current of 200A. Static characteristics specify a typical VCE(sat) of 3.1V at 100A and 15V, with a total gate charge of 510nC. Thermal resistance from junction to case is 0.16°C/W for the IGBT and 0.35°C/W for the diode.
Feature Summary
- Half-bridge configuration with discrete super-fast recovery free-wheel diodes
- Isolated baseplate design for simplified thermal management
- Optimized for high-frequency operation between 20kHz and 25kHz
- Low drive power requirements and low saturation voltage
Applications
- AC Motor Control
- Motion/Servo Control
- UPS Systems
- Welding Power Supplies
- Laser Power Supplies
Procurement Notes
Verify the manufacturer origin as Powerex Inc., not Mitsubishi Electric, despite shared naming conventions. Confirm the specific suffix '28H' indicates the 1400V rating within the H-Series lineup. Ensure procurement channels provide original datasheets matching the Powerex Youngwood facility specifications to avoid counterfeit components.
Selection Notes
Select this module for applications requiring 1400V blocking capability and 100A continuous current handling. Evaluate thermal management needs based on the 0.16°C/W junction-to-case resistance. Ensure the driving circuit can support the specified gate voltage limits and switching frequencies up to 25kHz while maintaining junction temperatures below 150°C.
Part Context
This component belongs to the IGBTMOD™ H-Series line designed for general-purpose switching applications. It represents a dual-module solution integrating both the transistor and anti-parallel diode into a single insulated package. The series is engineered to balance performance metrics like low saturation voltage with robust switching capabilities for industrial power electronics.
Replacement Considerations
Direct replacements must match the 1400V/100A rating and half-bridge topology. Verify pinout compatibility and mounting dimensions (94mm x 80mm x 30mm max). Check if alternative modules offer comparable thermal resistance and switching speeds for equivalent system performance.
FAQ
What is the maximum operating frequency for this module?
The module is designed for high-frequency operation typically ranging from 20kHz to 25kHz.
How is the free-wheel diode configured?
Each IGBT transistor includes a reverse-connected super-fast recovery free-wheel diode integrated within the module.
What is the isolation voltage rating?
The module provides an isolation voltage (VRMS) of 2500 Volts between the components/baseplate and the heat sinking baseplate.
