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Product Detailed Parameters
- Description：IGBT MOD 600V 200A 650W
- Series：IGBTMOD™
- Mfr：Powerex Inc.
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：650 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：30 nF @ 10 V
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Overview
The CM200DY-12NF is a dual IGBT module from the NF-Series, manufactured by Powerex Inc. It features a half-bridge configuration with two IGBT transistors and discrete super-fast recovery free-wheel diodes. The device is rated for 600 Volts DC blocking voltage and 300 Amperes of continuous collector current. Designed for high-power switching applications, it offers low drive power requirements and low saturation voltage (VCE(sat)). The module includes an isolated baseplate to facilitate simplified system assembly and efficient thermal management.
Feature Summary
- Half-bridge configuration integrating two IGBTs with reverse-connected super-fast recovery free-wheel diodes
- Isolated baseplate design enabling simplified system assembly and effective heat sinking
- Low drive power consumption combined with low VCE(sat) for improved efficiency
Applications
- AC motor control systems
- Uninterruptible Power Supplies (UPS)
- Battery powered supplies
Part Context
This component belongs to the CM-series IGBT modules produced by Powerex Power Semiconductors. It is part of the NF-Series lineup, which is engineered specifically for high-power switching environments. The module integrates multiple semiconductor components into a single package to reduce parasitic inductance and improve switching performance compared to discrete solutions.
