CM400HA-24H

Overview

The CM400HA-24H is a single IGBTMOD™ H-Series power module manufactured by Powerex Inc. It integrates one N-channel IGBT transistor and a reverse-connected super-fast recovery free-wheel diode within an isolated baseplate package. The device supports a collector-emitter voltage (V_CES) of 1200 Volts and a continuous collector current (I_C) rating of 400 Amperes at Tj = 25 °C. Peak collector current reaches 800 Amperes under pulsed conditions. The module features low saturation voltage, low drive power requirements, and high-frequency operation capabilities between 20 kHz and 25 kHz. Thermal resistance from junction to case is specified at 0.045 °C/W for the IGBT and 0.09 °C/W for the diode.

Feature Summary

• Single configuration integrating one IGBT transistor with a discrete super-fast recovery free-wheel diode
• Isolated baseplate design providing simplified system assembly and thermal management
• Optimized for high-frequency switching applications operating between 20 kHz and 25 kHz
• Low gate drive power requirements combined with low collector-emitter saturation voltage

Applications

• AC Motor Control
• Motion/Servo Control
• Uninterruptible Power Supplies (UPS)
• Welding Power Supplies
• Laser Power Supplies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact electrical tolerances or packaging variations. Confirm that the component matches the original manufacturer's specifications for the intended switching application. Ensure proper handling procedures are followed due to electrostatic sensitivity. Cross-reference datasheet parameters with actual supplier certificates before integration into critical systems.

Selection Notes

Select this module for high-power switching circuits requiring 1200 V blocking capability and 400 A continuous current handling. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance values. Ensure gate drive circuits can supply sufficient current for the total gate charge requirement while maintaining the recommended ±15 V drive levels. Verify peak current demands do not exceed the 800 A pulsed limit without violating junction temperature constraints.

Part Context

This component belongs to the IGBTMOD™ H-Series line of insulated gate bipolar transistor modules produced by Powerex Inc. The series is engineered for robust performance in industrial power conversion environments. The H-Series designation indicates specific internal chip technology optimized for high-current density and efficient heat dissipation compared to earlier generations.

Replacement Considerations

Direct replacements must match the 1200 V / 400 A rating and single IGBT plus diode topology. Verify pinout compatibility and mounting hole dimensions (M6 terminals, M4 mounting screws). Check if alternative modules offer comparable switching speeds and thermal resistance values to maintain system efficiency.