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Product Detailed Parameters
- Description：TRANS 2NPN 25V 50MA SOT-363
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：50mA
- Voltage - Collector Emitter Breakdown (Max)：25V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 100µA, 5V
- Power - Max：350mW
- Frequency - Transition：50MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp CMKT5089M10 is a surface mount dual NPN silicon matched hFE transistor housed in an SOT-363 package. It contains two individually isolated transistors designed for high gain and low noise applications. Key electrical parameters include a collector-emitter voltage of 25 V, continuous collector current of 50 mA, and power dissipation of 350 mW. The device features a minimum DC current gain (hFE) of 400 at IC=0.1mA and a transition frequency (fT) of 50 MHz. Matching characteristics ensure hFE ratios between 0.9 and 1.0 and a maximum VBE difference of 5.0 mV.
Feature Summary
- Dual NPN configuration with individually isolated transistors
- Matched hFE characteristics for precision circuitry
- UltraMini SOT-363 surface mount packaging
Applications
- High gain amplifier circuits
- Low noise signal processing
- Precision differential stages
Procurement Notes
Verify the specific ordering suffix to confirm plating options. The PBFREE designation indicates lead-free plating compliance. Confirm the manufacturer's standard terms regarding limitations and damages before finalizing procurement. Ensure the component matches the required environmental regulations for the intended deployment.
Selection Notes
Select this component when matched transistor pairs are required in a compact surface mount footprint. The SOT-363 package accommodates space-constrained designs. Verify that the 50 mA continuous collector current and 25 V breakdown voltages meet the circuit requirements. Consider the thermal resistance of 357 °C/W for heat dissipation planning.
Part Context
This part belongs to the Central Semiconductor UltraMini series, utilizing epitaxial planar process technology. It serves as a dual-transistor alternative to discrete single units, offering improved matching performance. The marking code C9M0 identifies the device on the package.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility if considering generic SOT-363 dual NPN alternatives.
FAQ
What is the maximum allowed difference in base-emitter voltage between the two transistors?
The maximum difference in base-emitter voltage (|VBE1-VBE2|) is 5.0 mV when measured at VCE=5.0V and IC=100μA.
What is the noise figure specification for this device?
The noise figure (NF) is specified as a maximum of 2.0 dB under conditions of VCE=5.0V, IC=100μA, RS=1.0kΩ, and a frequency range of 10Hz to 15.7kHz.
How are the pins arranged in the SOT-363 package?
Pin 1 is Emitter Q1, Pin 2 is Base Q1, Pin 3 is Collector Q2, Pin 4 is Emitter Q2, Pin 5 is Base Q2, and Pin 6 is Collector Q1.
