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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.28A SOT563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLDM7002AJ is a surface-mount silicon dual N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes the Japanese pinout configuration within an SOT-563 package. Key electrical parameters include a Drain-Source Voltage (VDS) of 60 V, Continuous Drain Current (ID) of 280 mA, and Gate-Source Voltage (VGS) of 40 V. The device features a maximum rDS(ON) of 2.0 Ω at VGS=10V and ID=500mA. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Dual N-channel enhancement-mode architecture designed for high-speed pulsed amplifier and driver applications.
- Japanese pinout configuration distinguishes it from standard USA pinout variants.
- Low on-resistance characteristics optimized for efficient switching performance.
Applications
- High-speed pulsed amplifier circuits
- Driver applications requiring dual channel isolation
- Switching circuits utilizing low-side load configurations
Procurement Notes
Verify the specific ordering suffix when purchasing. The PBFREE designation indicates lead-free plating compliance. Confirm the Japanese pinout requirement against the schematic, as this variant differs electrically in pin assignment from the standard CMLDM7002A USA pinout version. Ensure compatibility with automated placement equipment for the SOT-563 package.
Selection Notes
Select this component when a dual N-channel MOSFET with Japanese pinout orientation is required. Compare rDS(ON) values at specific gate voltages against circuit requirements. Consider thermal resistance limits based on the PCB copper pad area, as power dissipation ratings vary significantly between FR-4 epoxy boards with different copper areas.
Part Context
This part belongs to the CMLDM7002A family of surface mount silicon dual N-channel enhancement-mode MOSFETs. The AJ suffix specifically denotes the Japanese pinout configuration, whereas the base model uses the USA pinout. All variants share identical electrical specifications but differ in physical pin arrangement.
Replacement Considerations
Direct substitutes must match the SOT-563 package and Japanese pinout configuration. Generic dual N-channel replacements may utilize the USA pinout, requiring schematic modification. Verify that alternative components meet the 60V breakdown voltage and 280mA continuous current ratings.
