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The CMLDM7005 TR PBFREE is a dual N-channel enhancement mode MOSFET manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in an SOT-563 surface-mount package. The device features a drain-source voltage (Vdss) rating of 20 V and supports a continuous drain current (Id) of 1.4 A at 25°C. Key electrical characteristics include a maximum gate threshold voltage of 1.2 V at 250 µA, a typical gate charge of 1.2 nC at 4.5 V, and a maximum input capacitance of 100 pF at 16 V. The component operates within a junction temperature range of -65°C to 150°C with a power dissipation capacity of 350 mW.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead-free compliance. Confirm that the requested quantity aligns with standard factory reel sizes or cut-tape availability. Cross-reference the manufacturer part number with distributor databases to validate current production status and regional distribution channels before finalizing procurement plans.
Select this component when a dual N-channel MOSFET solution is required in an SOT-563 package. Ensure the application voltage does not exceed the 20 V drain-source rating. Verify that the gate drive voltage meets the logic-level threshold requirements for efficient switching. Consider the 350 mW power dissipation limit and thermal management needs for the specific PCB layout.
This part belongs to the CMxxDM series from Central Semiconductor Corp, which focuses on small-signal MOSFET arrays. These components are designed to replace discrete single-transistor solutions, reducing board space and assembly complexity. The series typically offers optimized parameters for low-power switching applications common in modern consumer and industrial electronics.
Consult official substitution guides for verified equivalents. Ensure any replacement maintains the SOT-563 footprint, 20 V Vdss rating, and dual N-channel configuration. Verify pinout compatibility and electrical parameter margins to prevent circuit malfunction.