CMLDM7005 TR PBFREE

CMLDM7005 TR PBFREE

$0.15
  • Description:650MA 20V SMD MOSFET DUAL N-CHAN
  • Series:-

SKU:ec1e23b5911a Category: Brand:

  
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Product Detailed Parameters

  • Description:650MA 20V SMD MOSFET DUAL N-CHAN
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:650mA
  • Rds On (Max) @ Id, Vgs:230mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.58nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:100pF @ 16V
  • Power - Max:350mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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CMLDM7005 TR PBFREE

Overview

The CMLDM7005 TR PBFREE is a dual N-channel enhancement mode MOSFET manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in an SOT-563 surface-mount package. The device features a drain-source voltage (Vdss) rating of 20 V and supports a continuous drain current (Id) of 1.4 A at 25°C. Key electrical characteristics include a maximum gate threshold voltage of 1.2 V at 250 µA, a typical gate charge of 1.2 nC at 4.5 V, and a maximum input capacitance of 100 pF at 16 V. The component operates within a junction temperature range of -65°C to 150°C with a power dissipation capacity of 350 mW.

Feature Summary

  • Dual N-channel configuration for space-efficient circuit design
  • Logic-level gate drive capability for low-voltage control applications
  • High thermal stability suitable for demanding operating environments

Applications

  • Low-side switching in portable electronic devices
  • Power management circuits requiring compact form factors
  • Signal switching in consumer electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and lead-free compliance. Confirm that the requested quantity aligns with standard factory reel sizes or cut-tape availability. Cross-reference the manufacturer part number with distributor databases to validate current production status and regional distribution channels before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in an SOT-563 package. Ensure the application voltage does not exceed the 20 V drain-source rating. Verify that the gate drive voltage meets the logic-level threshold requirements for efficient switching. Consider the 350 mW power dissipation limit and thermal management needs for the specific PCB layout.

Part Context

This part belongs to the CMxxDM series from Central Semiconductor Corp, which focuses on small-signal MOSFET arrays. These components are designed to replace discrete single-transistor solutions, reducing board space and assembly complexity. The series typically offers optimized parameters for low-power switching applications common in modern consumer and industrial electronics.

Replacement Considerations

Consult official substitution guides for verified equivalents. Ensure any replacement maintains the SOT-563 footprint, 20 V Vdss rating, and dual N-channel configuration. Verify pinout compatibility and electrical parameter margins to prevent circuit malfunction.

CMLDM7005 TR PBFREECMLDM7005 TR PBFREE
$0.15
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