CMLDM7120G TR PBFREE

$0.97

Description：MOSFET N-CH 20V 1A SOT563
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e5c44d5f8f7d Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 1A SOT563
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
Rds On (Max) @ Id, Vgs：100mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-563
Package / Case：SOT-563, SOT-666

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CMLDM7120G TR PBFREE

Overview

The CMLDM7120G TR PBFREE is a surface-mount N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process for high-speed pulsed amplifier and driver applications. Key electrical parameters include a Drain-Source Voltage (VDS) of 20 V, Gate-Source Voltage (VGS) of 8.0 V, and Continuous Drain Current (ID) of 1.0 A. The device features a maximum rDS(ON) of 0.25 Ω at VGS=1.5V and a total gate charge (Qg) of 2.4 nC. It operates within a junction temperature range of -65°C to +150°C and is housed in an SOT-563 package.

Feature Summary

Logic level compatibility with low threshold voltage
ESD protection up to 2kV
Halogen-free design

Applications

Load/Power switches
Power supply converter circuits
Battery powered portable equipment

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'TR' designation indicates tape and reel packaging, while 'PBFREE' confirms lead-free plating compliance. Ensure the required quantity matches the manufacturer's standard shipping multiples. Confirm that the SOT-563 package dimensions align with the target PCB footprint before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low on-resistance at logic-level gate voltages. The 20V rating suits low-voltage switching tasks. Consider the thermal resistance values based on the specific copper pad area used on the PCB. Verify that the 1.0A continuous current capability meets the load requirements without exceeding power dissipation limits under steady-state conditions.

Part Context

This part belongs to the Central Semiconductor CMLDM series of surface-mount silicon N-channel enhancement-mode MOSFETs. These devices are engineered using an N-Channel DMOS process specifically optimized for high-speed pulsed amplifier and driver applications. The series emphasizes low rDS(ON) performance and logic level compatibility for efficient control in compact electronic systems.