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Product Detailed Parameters
- Description：TRANS 2PNP 40V 200MA SOT-563
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 10mA, 1V
- Power - Max：150mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The CMLT3906EG TR PBFREE is a dual PNP surface-mount silicon transistor housed in an SOT-563 package. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 6.0 V. The device supports a continuous collector current of 200 mA with power dissipation ratings ranging from 150 mW to 350 mW depending on the PCB copper pad area. Operating junction temperatures span from -65°C to +150°C, and the transition frequency (fT) reaches 300 MHz.
Feature Summary
- Dual complementary PNP transistors integrated into a compact SOT-563 footprint for space-constrained designs.
- Enhanced electrical specifications including increased breakdown voltages and reduced saturation voltage compared to standard equivalents.
- Halogen-free construction compliant with environmental design standards.
Applications
- Small signal general purpose amplifier circuits
- High-speed switching applications
- Complementary transistor pairs in analog signal processing
Procurement Notes
Verify that the ordering suffix explicitly includes PBFREE to ensure lead-free plating compliance. Confirm the specific EG variant designation matches the enhanced specification requirements. Check datasheet thermal resistance notes regarding copper pad areas when calculating power dissipation limits for your specific PCB layout.
Selection Notes
Select this component when a dual PNP configuration is required in a small surface-mount package. Ensure the design accounts for the 60 V collector-base voltage rating if operating near maximum limits. Compare the 300 MHz transition frequency against circuit speed requirements to verify suitability for high-frequency operation.
Part Context
This part belongs to Central Semiconductor's enhanced specification series, which improves upon standard 2N3906 parameters. The EG suffix denotes halogen-free manufacturing. It serves as a compact alternative to discrete single transistors where board space is limited.
Replacement Considerations
Standard 2N3906 devices may not meet the enhanced 60 V VCBO or 6.0 V VEBO ratings specified for this part. Verify pinout compatibility between SOT-563 variants before substitution.
FAQ
What is the maximum collector-base voltage for the CMLT3906EG?
The maximum collector-base voltage (VCBO) is 60 V.
How does the power dissipation rating vary?
Power dissipation ranges from 150 mW to 350 mW depending on the FR-4 epoxy PCB copper mounting pad area used.
Is this device halogen-free?
Yes, the device is halogen-free by design.
