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Product Detailed Parameters
- Description：100MA 20V SMD MOSFET P-CHANNEL E
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：658 pC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：250mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-953
- Package / Case：SOT-953
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Overview
The CMNDM8001 TR PBFREE is a single-channel P-Channel Enhancement-mode Silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes a P-Channel DMOS process designed for high-speed pulsed applications. The device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 100 mA at 25°C. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±10 V, a typical on-resistance (Rds(on)) of 2.4 Ohms, and a power dissipation of 250 mW. It is housed in an SOT-523 surface-mount package.
Feature Summary
- P-Channel Enhancement-mode construction using specialized DMOS process technology
- Optimized for high-speed pulsed operation capabilities
- Compact SOT-523 surface-mount packaging design
Applications
- High-speed switching circuits
- Low-voltage power management systems
- Battery protection modules
Procurement Notes
Verify the specific datasheet version for the CMNDM8001 TR PBFREE to confirm exact electrical tolerances and thermal characteristics. Ensure compatibility with the target PCB footprint for the SOT-523 package. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as supply chain conditions may vary.
Selection Notes
Select this component for applications requiring a compact P-Channel MOSFET with low voltage ratings. The 20 V Vdss and 100 mA Id limits define its operational boundaries. Consider the 2.4 Ohm on-resistance for efficiency calculations in low-current paths. The SOT-523 package is suitable for space-constrained designs requiring surface-mount integration.
Part Context
This part belongs to the Central Semiconductor discrete semiconductor portfolio, specifically within the MOSFET category. It represents a standard small-signal switching solution utilizing silicon DMOS technology. The product line focuses on providing reliable components for consumer electronics and industrial control applications where size and switching speed are critical factors.
Replacement Considerations
Cross-reference with other P-Channel MOSFETs in the SOT-523 package offering similar 20 V and 100 mA specifications. Verify pinout compatibility and ensure that alternative devices meet or exceed the required Rds(on) and Vgs thresholds for the intended circuit design.
