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Product Detailed Parameters
- Description：MOSFET N-CH 20V 3.2A SOT23F
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：50mOhm @ 1.6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：395 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23F
- Package / Case：SOT-23-3 Flat Leads
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Overview
The CMPDM203NH BK is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features low on-resistance, logic-level gate compatibility, and high current handling capabilities within the SOT-23F package.
Feature Summary
- High current capability with continuous drain current of 3.2A
- Low on-state resistance (rDS(ON)) for efficient power switching
- Logic level gate voltage compatibility for direct drive
- Designed for high-speed pulsed amplifier and driver applications
Applications
- Load and power switches
- Power supply converter circuits
- Battery-powered portable equipment
Procurement Notes
Verify component status before procurement as this specific part number has been classified as End of Life (EOL) by the manufacturer. Confirm availability through authorized distributors or check for alternative sourcing options if inventory is depleted. Ensure design requirements align with available replacement components if necessary.
Selection Notes
Select this component for applications requiring high-speed switching and logic-level gate drive compatibility. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Verify that the required drain-source voltage and continuous current ratings meet the specific circuit demands.
Part Context
This component belongs to the Central Semiconductor MOSFET family, specifically designed for surface-mount applications. It is part of a series of N-channel enhancement-mode devices optimized for efficiency and speed in modern electronic circuits.
Replacement Considerations
No official replacement part numbers are listed in the manufacturer's discontinuation notice. Contact Central Semiconductor engineering for potential alternate source recommendations.
