CMPDM303NH TR

Description：MOSFET N-CH 30V 3.6A SOT-23F
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)

SKU:0b803175d396 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A SOT-23F
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：40mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23F
Package / Case：SOT-23-3 Flat Leads

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CMPDM303NH TR

Overview

The CMPDM303NH is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured using an N-Channel DMOS process. It features a SOT-23F package with a maximum drain-source voltage of 30 V and a continuous drain current of 3.6 A. The device offers a low on-resistance of 0.078 Ω maximum at VGS=2.5V, a gate-source voltage rating of 12 V, and a power dissipation capacity of 350 mW. Operating junction temperatures range from -55 to +150 °C.

Feature Summary

High current capability designed for high-speed pulsed amplifier and driver applications
Logic level compatibility enabled by low threshold voltage characteristics
Low leakage current and low rDS(ON) performance

Applications

Load and power switches
Power supply converter circuits
Battery-powered portable equipment

Procurement Notes

Verify component status carefully as the datasheet references a Product Discontinuation Notice (PDN01070) classifying this specific part number as End of Life. Confirm availability directly with Central Semiconductor Corp or authorized distributors before finalizing procurement plans.

Selection Notes

Select this component for designs requiring logic-level drive compatibility and moderate current handling in compact surface-mount layouts. Ensure thermal management accommodates the specified 350 mW power dissipation limit within the SOT-23F package constraints.

Part Context

This device belongs to the CMPDM series of N-Channel enhancement-mode silicon MOSFETs produced by Central Semiconductor Corp. It utilizes an N-Channel DMOS process technology specifically engineered to deliver high current density and fast switching speeds suitable for modern electronic circuit architectures.