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Product Detailed Parameters
- Description：300MA 60V SMD MOSFET N-CHANNEL E
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：500 pC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CMPDM7002AE TR PBFREE is a single N-channel enhancement mode MOSFET manufactured by Central Semiconductor Corp. It features a silicon construction housed in an SOT-23 surface-mount package. The device provides a drain-source breakdown voltage of 60 V and supports a continuous drain current of 300 mA. Key electrical characteristics include a maximum on-resistance of 1.4 ohms, a gate charge of 500 pC, and a power dissipation rating of 100 mW. It operates within a temperature range of -65°C to +150°C.
Feature Summary
- N-channel enhancement mode operation for switching applications
- Integrated ESD protection capabilities
- Silicon-based construction for thermal stability
Applications
- ESD protection circuits
- General-purpose switching
- Low-voltage signal routing
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before procurement. Ensure the component matches the required SOT-23 footprint and pinout for your design.
Selection Notes
Select this component when a compact N-channel MOSFET with integrated ESD protection is required. The 60V rating suits low-voltage systems, while the 1.4-ohm on-resistance impacts conduction losses. Verify that the 100 mW power dissipation limit meets the thermal requirements of the target application environment.
Part Context
This part belongs to the CMPDM series of discrete semiconductors from Central Semiconductor Corp. It is designed as a small-signal switching device suitable for space-constrained designs. The SOT-23 package allows for automated surface-mount assembly, integrating standard MOSFET functionality with electrostatic discharge protection features.
Replacement Considerations
Consult official substitution guides for verified equivalents. Generic replacements may differ in ESD protection levels or on-resistance specifications.
