CMPDM7002AG BK PBFREE

$0.11

Description：MOSFET N-CH 60V 280MA SOT23
Series：-
Mfr：Central Semiconductor Corp
Package：Box

SKU:99aa7318e66a Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 280MA SOT23
Series：-
Mfr：Central Semiconductor Corp
Package：Box
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.59 nC @ 4.5 V
Vgs (Max)：40V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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CMPDM7002AG BK PBFREE

Overview

The CMPDM7002AG BK PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features a low on-state drain-source voltage and low on-state resistance. Key electrical parameters include a maximum drain-source voltage of 60 V, a continuous drain current of 280 mA, and a power dissipation rating of 350 mW at 25°C ambient temperature. The component operates within a junction temperature range of -65 to +150 °C.

Feature Summary

Designed for high-speed pulsed amplifier and driver applications using N-Channel DMOS technology
Offers low on-state drain-source voltage and low on-state resistance characteristics
Halogen-free construction by design

Applications

High-speed pulsed amplifiers
Driver circuits

Procurement Notes

Verify the specific ordering suffixes required for your manufacturing needs. The datasheet indicates that adding 'PBFREE' specifies lead-plated devices, while 'TIN/LEAD' requests tin/lead plating. Confirm whether the 'BK' suffix denotes bulk packaging or another specific configuration not detailed in the standard part number structure. Ensure compatibility with halogen-free environmental regulations if applicable to your assembly process.

Selection Notes

Select this component when designing circuits requiring fast switching speeds and low conduction losses in a compact SOT-23 package. The device is suitable for applications demanding a 60 V breakdown voltage and moderate continuous current handling. Consider the thermal resistance of 357 °C/W when evaluating heat dissipation requirements for the specific PCB layout and operating environment.

Part Context

This component is a specialized version of the standard 2N7002 enhancement-mode N-channel MOSFET. It shares the same fundamental architecture but is optimized by Central Semiconductor for superior performance in high-frequency switching environments. The CMPDM7002A and CMPDM7002AG variants are functionally equivalent regarding electrical ratings, differing primarily in environmental compliance markings.