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Product Detailed Parameters
- Description：MOSFET N-CH 60V 280MA SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：40V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CMPDM7002AG TR PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features a maximum drain-source voltage of 60 V, continuous drain current of 280 mA, and power dissipation of 350 mW. Key electrical parameters include a gate-source threshold voltage range of 1.0 to 2.5 V, on-state resistance of 2.0 Ω at 10 V gate drive, and total gate charge of 0.592 nC. Operating junction temperature ranges from -65 °C to +150 °C.
Feature Summary
- Designed for high-speed pulsed amplifier and driver applications using N-Channel DMOS technology
- Offers low on-state resistance and low on-state voltage characteristics
- Halogen-free construction by design
Applications
- High speed pulsed amplifiers
- Driver circuits
Procurement Notes
Verify the specific ordering suffix 'TR' corresponds to tape-and-reel packaging as indicated in standard distributor listings. Confirm that 'PBFREE' denotes lead-free plating per manufacturer standards. Ensure the component matches the SOT-23 mechanical outline and marking code '702G'. Cross-reference datasheet revision R5 (February 2015) for accurate electrical limits.
Selection Notes
Select this component when low on-state resistance and fast switching speeds are required for pulsed applications. The 60 V breakdown voltage suits low-voltage signal switching. Verify thermal management requirements against the 357 °C/W thermal resistance rating. Consider the SOT-23 package constraints for PCB layout and heat dissipation capabilities.
Part Context
This part is a specialized version of the 2N7002 enhancement-mode N-Channel MOSFET. It shares the same fundamental architecture but is optimized for lower on-state resistance and voltage drops compared to standard variants. The CMPDM7002A designation represents the base model, while the AG suffix indicates halogen-free compliance.
Replacement Considerations
Standard 2N7002 devices may serve as functional substitutes if higher on-state resistance is acceptable. Verify pinout compatibility with the SOT-23 configuration (Gate, Source, Drain). Ensure replacement parts meet the required 60 V breakdown and 280 mA current ratings.
