CMPDM7003 TR PBFREE

$0.48

Description：MOSFET N-CH 50V 280MA SOT23
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e0e71e402268 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 280MA SOT23
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.76 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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CMPDM7003 TR PBFREE

Overview

The CMPDM7003 is a surface-mount N-channel enhancement-mode MOSFET manufactured using an N-Channel DMOS process. It features a Drain-Source Voltage (VDS) of 50 V and a continuous Drain Current (ID) of 280 mA at 25°C. The device offers a low on-resistance (rDS(ON)) ranging from 1.1 Ω to 3.0 Ω depending on gate drive, with a maximum Gate-Source Voltage (VGS) of 12 V. Power dissipation is rated at 350 mW, and the operating junction temperature spans -65°C to +150°C. Total gate charge (Qg) is typically 0.764 nC.

Feature Summary

ESD protection up to 2kV
Low rDS(ON)
Fast switching capability
Logic level compatibility

Applications

Load/Power switches
Power supply converter circuits
Battery powered portable equipment

Procurement Notes

Verify the specific ordering suffix when purchasing. The PBFREE designation indicates lead-free plating compliance. Confirm the required plating option for your assembly process, as Tin/Lead variants require a distinct suffix. Ensure the component matches the SOT-23 package outline and marking code C7003 for correct integration into the design.

Selection Notes

Select this component for high-speed pulsed amplifier and driver applications requiring low on-resistance. Consider the 50 V drain-source voltage rating and 280 mA continuous current limit for circuit design. The logic-level compatibility allows for direct interface with standard control signals. Verify thermal management requirements given the 350 mW power dissipation rating in the SOT-23 package.

Part Context

This part belongs to the Central Semiconductor CMPDM series of surface-mount silicon N-channel enhancement-mode MOSFETs. Manufactured via the N-Channel DMOS process, it is designed for applications demanding fast switching and low on-resistance. The CMPDM7003 utilizes the SOT-23 case configuration, providing a compact footprint suitable for space-constrained portable electronics and power management designs.