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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：500 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
- Resistance - RDS(On)：100 Ohms
- Power - Max：350 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The CMPF4393 TR PBFREE is a surface-mount silicon N-channel JFET manufactured by Central Semiconductor Corp. It utilizes an epitaxial planar process and is housed in an SOT-23 package with a marking code of 6G. The device supports a maximum drain-source voltage (VDS) of 40 V and a power dissipation (PD) of 350 mW at 25°C ambient temperature. Key electrical characteristics include a zero-gate-voltage drain current (IDSS) ranging from 5.0 mA to 30 mA at VDS=20V, and an on-resistance (rDS(ON)) between 60 Ω and 100 Ω at ID=1.0mA. The gate-source cutoff voltage (VGS(OFF)) spans 0.5 V to 3.0 V at ID=1.0nA.
Feature Summary
- Designed for switching applications using an epitaxial planar silicon process
- Surface mount construction in an SOT-23 case for automated placement
- High input impedance with low reverse gate leakage current
Applications
- Switching circuits
- Signal routing
- Amplifier stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm plating specifications. The 'PBFREE' suffix indicates lead-free plating, while other suffixes may denote tin/lead options or standard availability. Confirm the reel size (7-inch or 13-inch) matches the required packaging quantity before finalizing procurement orders.
Selection Notes
Select this component when a 40 V N-channel JFET in an SOT-23 package is required for space-constrained designs. Ensure the circuit design accommodates the specified IDSS range of 5.0 mA to 30 mA and the rDS(ON) limits. Verify that the thermal resistance of 357 °C/W aligns with the system's heat dissipation capabilities under continuous operation.
Part Context
This part belongs to the CMPF439x series, which includes the CMPF4391 and CMPF4392 variants. These devices share the same physical footprint and manufacturing process but differ in their electrical parameters, specifically regarding IDSS and VGS(OFF) thresholds. The CMPF4393 represents the lowest threshold variant within this specific family grouping.
Replacement Considerations
Direct substitutes such as the MMBF4393LT3G exist but operate at a lower voltage rating of 30 V. Cross-compatibility requires verifying that the application can tolerate the reduced VDS and VGS ratings. Alternative sourcing should strictly match the 40 V breakdown voltage requirement.
