CMS0103M-HF

Overview

The CMS0103M-HF is an N-channel MOSFET manufactured by Comchip Technology, designed for surface-mount applications. It features a 100V drain-source voltage rating and supports a continuous drain current of 3A at ambient temperature. The device dissipates up to 1.5W of power under standard conditions. Packaged in a compact SOT-89-3L case, it utilizes silicon technology for reliable switching performance.

Feature Summary

• N-channel enhancement mode construction
• Surface-mount SOT-89-3L package design
• High-voltage capability for 100V applications

Applications

• Power management circuits requiring 100V ratings
• General-purpose switching applications
• Low-power electronic devices

Procurement Notes

Verify the specific datasheet version when sourcing, as electrical characteristics may vary between revisions. Confirm that the SOT-89-3L footprint matches your PCB layout requirements. Ensure thermal management strategies align with the 1.5W dissipation limit for your intended operating environment.

Selection Notes

Select this component for designs necessitating a 100V breakdown voltage with moderate current handling capabilities. The SOT-89-3L package offers a balance between thermal performance and board space efficiency compared to smaller packages. Consider the 3A continuous current rating against peak load requirements to ensure adequate safety margins.

Part Context

Comchip Technology specializes in semiconductor components including diodes and transistors. The CMS0103M-HF belongs to their single FET series, expanding their portfolio beyond traditional rectifiers into active switching elements. This part supports industrial and consumer electronics markets requiring reliable power control solutions.

FAQ

What is the maximum drain-source voltage for the CMS0103M-HF?

The maximum repetitive drain-source voltage (V_DSS) is rated at 100V.

Which package type does the CMS0103M-HF use?

It is housed in an SOT-89-3L surface-mount package.