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Product Detailed Parameters
- Description：MOSFET N-CH 60V 3A SOT23-3
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：105mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The CMS03N06T-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a Drain-Source Voltage (Vdss) of 60 V and a Continuous Drain Current (Id) of 3 A at 25°C. The device has a maximum Gate-Source Voltage (Vgs) of ±20 V and a typical On-Resistance (Rds(on)) of 105 mΩ. Power dissipation is rated at 1.7 W, with an operating temperature range from -55°C to +150°C. It utilizes a SOT-23 package.
Feature Summary
- N-channel enhancement mode construction for efficient switching applications
- Low on-resistance characteristics for reduced conduction losses
- Fast switching capability supported by low gate charge
- Automotive-grade reliability with extended temperature operation
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific manufacturer datasheet revision before integration, as component specifications may vary between production batches. Confirm that the SOT-23 footprint matches your PCB design constraints. Ensure thermal management strategies account for the 1.7 W power dissipation rating under expected load conditions. Check RoHS compliance status if required by your manufacturing standards.
Selection Notes
Select this component when a compact N-channel MOSFET with 60 V breakdown voltage is required for low-power switching tasks. The 3 A current rating suits moderate load applications. Consider the SOT-23 package size for space-constrained designs. Evaluate thermal performance against the 1.7 W dissipation limit in your specific circuit environment.
Part Context
This part belongs to Comchip Technology's discrete semiconductor product line, specifically within their MOSFET category. It is designed for general-purpose switching applications requiring reliable performance in automotive and industrial environments. The device complements other components in power management and motor control circuits.
Replacement Considerations
No direct public substitute part numbers are confirmed for this specific model. Verify compatibility with alternative N-channel MOSFETs having similar Vdss, Id, and Rds(on) specifications if sourcing issues arise.
