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CMS06(TE12L,Q,M) is listed in the Single Diodes range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE SCHOTTKY 30V 2A MFLAT. Review the specifications below when checking this part for your BOM.
The Toshiba CMS06(TE12L,Q,M) is a silicon Schottky barrier diode designed for surface-mount applications. It features an M-FLAT (SOD-128) package with dimensions of 2.4x3.8 mm. The device supports a maximum repetitive reverse voltage of 30 V and a continuous forward current of 2 A. Key electrical characteristics include a low forward voltage drop of 370 mV at 2 A and a maximum reverse leakage current of 3 mA at 30 V. It operates within a junction temperature range of -40°C to +150°C.
Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging and tape specifications. Ensure compatibility with standard SMD reflow soldering profiles. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before integration into regulated assemblies.
Select this component when a 30 V rating and 2 A continuous current capacity are required in a small footprint. Compare the 370 mV forward voltage specification against alternative packages to ensure thermal management requirements are met. Verify that the M-FLAT land pattern matches the PCB design guidelines provided by Toshiba.
This part belongs to the Toshiba CMS series of Schottky diodes, which are engineered for general-purpose rectification in compact consumer and industrial electronics. The series utilizes advanced silicon processes to achieve low forward voltage and fast recovery characteristics within the M-FLAT form factor.
Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinout and thermal resistance parameters if considering alternatives from other manufacturers.
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