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Product Detailed Parameters
- Description：MOSFET N-CH 60V 23A/125A 8DFN
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 125A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3467 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：86W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerVDFN
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Overview
The CMS23N06H8-HF is a single N-channel enhancement mode MOSFET manufactured by Comchip Technology. It utilizes silicon technology and features an 8-DFN (5x6) surface-mount package. The device supports a drain-source voltage of 60 V and a gate-source voltage of ±20 V. Continuous drain current ratings are specified at 23 A at ambient temperature and 125 A at case temperature. Power dissipation reaches 86 W under case conditions. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Advanced shielded-gate technology for optimized performance
- Ultra-low on-resistance characteristics
- Reduced gate charge for efficient switching
Applications
- DC-DC converters
- Motor control circuits
- Load switch applications
Procurement Notes
Verify the specific datasheet revision, as documentation indicates Rev B. Confirm that the 125A rating applies strictly to case temperature conditions rather than ambient temperature. Ensure the DFN-5x6-8 footprint matches the PCB layout requirements before finalizing procurement decisions.
Selection Notes
Select this component when high current handling in a compact surface-mount package is required. The low Rds(on) and gate charge support efficient power management. Verify thermal management capabilities for the 86W dissipation rating. Ensure the 60V breakdown voltage aligns with the circuit's maximum operating voltage.
Part Context
This part belongs to Comchip Technology's single FET MOSFET category. It is designed for general-purpose switching applications requiring robust current handling. The product falls under the Transistors sub-category within the broader semiconductor market.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic cross-references may not match the specific shielded-gate technology or thermal characteristics.
