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Product Detailed Parameters
- Description：MOSFET P-CH 60V 25A 8DFN
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：55mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1408 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PDFN (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CMS25P06H8-HF is a P-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 25 A at case temperature. The device utilizes an advanced trench cell design to achieve a low on-resistance of 55 mΩ at 10 V gate drive. Packaged in a PDFN5x6-8L surface-mount format, it supports a maximum power dissipation of 35 W at case temperature and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced trench cell technology for optimized performance
- Low thermal resistance structure for efficient heat dissipation
- Surface-mount compatible packaging for automated assembly
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific datasheet revision (RevA) against your design requirements. Confirm that the PDFN5x6-8L package dimensions match your PCB footprint. Ensure thermal management strategies account for the 35 W case temperature dissipation rating. Check for any recent product change notices or end-of-life announcements from Comchip Technology before finalizing procurement plans.
Selection Notes
Select this component when a 60 V P-channel MOSFET with high current capability is required. The 55 mΩ on-resistance makes it suitable for applications prioritizing conduction loss reduction. Consider the PDFN5x6-8L package constraints regarding thermal pad exposure and soldering profiles. Compare against similar Comchip models like CMS16P06H8-HF if lower current ratings are acceptable for cost optimization.
Part Context
This part belongs to the CMS series of P-channel MOSFETs from Comchip Technology. These devices are designed for general-purpose switching applications requiring robust performance in compact packages. The H8 suffix typically denotes the specific package type and lead-free compliance status within the manufacturer's lineup.
Replacement Considerations
CMS16P06H8-HF offers similar voltage ratings but lower current capacity (16 A vs 25 A). Verify if the reduced current handling meets your application's peak and continuous load requirements before substituting.
