CMS32P03V8-HF

$0.22

Description：MOSFET P-CH 30V 7.7A/32A 8DFN
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)

SKU:44686bbad190 Category: Single FETs, MOSFETs Brand: Comchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 7.7A/32A 8DFN
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1345 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 29W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PDFN (SPR-PAK ) (3.3x3.3)
Package / Case：8-PowerWDFN

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CMS32P03V8-HF

Overview

The CMS32P03V8-HF is a single P-Channel enhancement mode MOSFET manufactured by Comchip Technology. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 7.7 A at ambient temperature, rising to 32 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.6 mΩ at Vgs = -10 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 1.6 W at ambient or 29 W at case temperature. The component utilizes an 8-PDFN surface-mount package.

Feature Summary

Utilizes gold termination technology for RoHS compliance and zero tin-whisker potential
Designed for high-speed surface-mount assembly processes
Enhances efficiency through low power loss characteristics

Applications

High-efficiency DC-DC converter circuits
Power management modules requiring low profile packaging
Automotive electronic control units

Procurement Notes

Verify the specific suffix against official Comchip documentation to confirm pinout and electrical tolerances. Confirm RoHS status and lead-free specifications directly with the manufacturer. Ensure the selected variant matches the required thermal dissipation capabilities for the intended application environment.

Selection Notes

Select this component when a compact P-Channel MOSFET with low on-resistance is required for space-constrained designs. Evaluate the thermal performance limits based on the specific PCB copper area available for heat sinking. Compare the gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds.

Part Context

This part belongs to Comchip's DFN/flat chip series, which standardizes surface-mount discrete semiconductors. The manufacturer emphasizes gold termination for reliability and compliance with strict environmental standards. This series targets applications demanding robust performance in high-temperature conditions with minimal footprint.

Replacement Considerations

Consult official substitution lists from Comchip Technology for verified equivalents. Cross-reference pinouts and thermal resistance values before implementing any alternative components.