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Product Detailed Parameters
- Description：MOSFET P-CH 30V 42A 8DFN
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2215 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.67W (Ta), 37W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PDFN (SPR-PAK ) (3.3x3.3)
- Package / Case：8-PowerWDFN
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Overview
The CMS42P03V8-HF is a P-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 42 A at case temperature. The device utilizes silicon technology and is housed in an SMD/SMT package, specifically the DFN5x6-8 (PR-PAK) form factor. Key electrical characteristics include a maximum on-resistance (Rds On) of 4 mΩ at 10 V gate drive. It supports a wide operating temperature range from -55°C to +150°C junction temperature and offers a power dissipation rating of 12 W.
Feature Summary
- Ultra-low on-resistance for high-efficiency power switching applications
- High continuous drain current capability in a compact surface-mount package
- Enhanced thermal performance with specified power dissipation ratings
Applications
- DC-DC converter output stages
- Low-side or high-side load switches
- Power management integrated circuits (PMIC) protection circuits
Procurement Notes
Verify the specific package marking and datasheet revision when sourcing, as manufacturing updates may occur. Confirm availability status directly with authorized distributors, as lead times can vary based on production cycles. Ensure compliance with RoHS directives if required for your assembly process. Cross-reference part numbers carefully to avoid confusion with similar series components.
Selection Notes
Select this component for designs requiring low conduction losses in 30 V systems. The 4 mΩ Rds On minimizes heat generation compared to higher resistance alternatives. Consider the DFN5x6-8 footprint for PCB space constraints. Evaluate thermal management requirements given the 12 W power dissipation limit under typical operating conditions.
Part Context
This part belongs to Comchip's CMS series of power MOSFETs, which are designed for general-purpose switching applications. The series emphasizes low on-resistance and high current density within small outline packages. It complements other devices in the lineup offering various voltage and current ratings for diverse power electronics needs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official manufacturer channels for qualified alternates that match the pinout, electrical specifications, and thermal characteristics.
