CMS45N10H8-HF

$1.55

Description：MOSFET N-CH 100V 45A PPAK
Series：-
Mfr：Comchip Technology
Package：Bulk

SKU:c853fa0fd5ba Category: Single FETs, MOSFETs Brand: Comchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 45A PPAK
Series：-
Mfr：Comchip Technology
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1003.9 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：94.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：P-PAK (5x6)
Package / Case：8-PowerTDFN

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CMS45N10H8-HF

Overview

The CMS45N10H8-HF is a RoHS-compliant, halogen-free N-channel MOSFET manufactured by Comchip Technology. It utilizes a PPAK5x6 molded plastic case and supports any mounting position. Key electrical specifications include a drain-source voltage of 100V, continuous drain current of 45A at TC=25°C, and a maximum pulsed drain current of 135A. The device features a static drain-source on-resistance of 20mΩ at VGS=10V and 26mΩ at VGS=4.5V. Thermal performance includes a junction-to-case resistance of 1.32°C/W and junction-to-ambient resistance of 94.7°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Improved dv/dt capability for enhanced switching stability.
Fast switching characteristics suitable for high-frequency applications.
Low on-resistance ensuring efficient power conduction.

Applications

DC-DC converters
Power amplifiers
Motor control circuits

Procurement Notes

Verify the specific revision status (Rev A) against the latest datasheet before integration. Confirm that the PPAK5x6 package dimensions align with the suggested PCB pad layout provided in the mechanical data section. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a low-profile surface-mount solution is required for high-current applications. The PPAK5x6 package offers a compact footprint compared to traditional packages while maintaining robust thermal dissipation capabilities. Consider the gate threshold voltage requirements to ensure compatibility with the driving logic levels in the target circuit design.

Part Context

This part belongs to Comchip Technology's lineup of N-channel enhancement mode MOSFETs designed for general-purpose switching applications. The device is engineered to provide reliable performance in environments requiring fast switching speeds and improved transient voltage handling capabilities within a standardized surface-mount form factor.