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Product Detailed Parameters
- Description：MOSFET P-CH 30V 9.6A/45A DFN5X6
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9.6A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2215 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 45W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5x6 (PR-PAK)
- Package / Case：8-PowerTDFN
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Overview
The CMS45P03H8-HF is a single P-Channel enhancement mode MOSFET manufactured by Comchip Technology. It features a 30 V drain-source voltage rating and utilizes silicon technology in a DFN-5x6-8 surface-mount package. The device supports a continuous drain current of 9.6 A at ambient temperature and 45 A at case temperature, with a maximum on-resistance of 15 mOhms. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 2 W of power.
Feature Summary
- High-power handling capability designed for demanding industrial applications
- Trench technology architecture for optimized performance
- Surface-mount construction for automated assembly integration
Applications
- Industrial usage requiring high-power handling
- Power switching circuits utilizing trench MOSFET technology
- Applications compatible with surface-mount DFN packaging
Procurement Notes
Verify component status as the CMS45P03H8-HF is listed as obsolete or discontinued by the manufacturer. Confirm availability through authorized distributors or secondary markets if sourcing is required. Ensure compatibility with existing designs before considering alternative components due to end-of-life status.
Selection Notes
Select this component for designs requiring a 30V P-Channel MOSFET with low on-resistance. Consider the thermal constraints of the DFN-5x6-8 package when determining heat dissipation requirements. Verify that the 15 mOhm resistance meets circuit efficiency targets and that the 45A case current rating aligns with peak load demands.
Part Context
This part belongs to Comchip Technology's line of single FETs and MOSFETs. It is categorized under transistors and specifically utilizes trench technology for improved electrical characteristics compared to standard planar devices. The product falls within the broader category of power semiconductors used for switching applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.
