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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7A 4CSP
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：26mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.5W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：CSPB1515-4
- Grade：-
- Qualification：-
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Overview
The CMSBN4615-HF is a dual N-channel enhancement mode MOSFET array from Comchip Technology, housed in a surface-mount CSPB1515-4 package. It features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 7 A at ambient temperature. The device exhibits a typical on-resistance of 26 mΩ and supports a power dissipation of 1.5 W under free-air conditions. Designed for high-frequency applications, it includes ESD protection and utilizes a common-drain configuration suitable for load switch implementations.
Feature Summary
- Dual N-channel enhancement mode architecture within a single surface-mount package
- Common-drain configuration facilitating unidirectional or bi-directional load switch operations
- Integrated electrostatic discharge (ESD) protection mechanisms
- Leadless surface-mount design optimized for automated assembly processes
Applications
- High-frequency circuit switching applications
- Unidirectional load switch implementations
- Bi-directional load switch configurations
- Portable electronic device power management
Procurement Notes
Verify the specific ordering suffix to ensure compliance with RoHS standards and halogen-free requirements. Confirm that the received components match the CSPB1515-4 package dimensions and pinout configuration. Validate datasheet parameters against current production revisions before integration into final designs.
Selection Notes
Select this component for space-constrained designs requiring dual N-channel functionality in a minimal footprint. Evaluate thermal performance based on the 1.5 W dissipation rating and PCB copper area constraints. Ensure gate-source voltage limits are respected during operation to maintain reliability and prevent dielectric breakdown.
Part Context
This device belongs to Comchip Technology's portfolio of surface-mount discrete semiconductors. The manufacturer specializes in innovative packaging solutions, including leadless formats designed for high-speed surface-mount processing. This part represents their focus on compact, efficient power management solutions for modern electronics.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify pin compatibility and electrical specifications when considering alternative manufacturers for this dual N-channel MOSFET array application.
