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Product Detailed Parameters
- Description：MOSFET N-CH 20V 0.5A SOT-723
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：56 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-723
- Package / Case：SOT-723
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Overview
The CMSN3134K-HF is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Comchip Technology. It is designed for general-purpose switching and amplification applications in power management circuits. The device utilizes advanced planar trench technology to achieve low on-resistance and fast switching speeds. It is housed in an SOT-23 surface-mount package, suitable for automated assembly processes. The component operates within specified voltage and current limits to ensure reliable performance in various electronic systems.
Feature Summary
- P-Channel enhancement mode construction for efficient switching control
- Low on-resistance characteristics enabled by planar trench technology
- Fast switching speed capabilities for high-frequency applications
- Surface-mount SOT-23 packaging for compact circuit board integration
Applications
- General-purpose power switching circuits
- Load switch applications in portable devices
- Power management modules requiring P-channel control
- Amplification stages in consumer electronics
Procurement Notes
Verify the specific datasheet version from Comchip Technology to confirm exact electrical parameters such as drain-source breakdown voltage and continuous drain current. Ensure the ordering suffix matches the required tape and reel or cut tape configuration. Cross-reference the pinout diagram with your PCB footprint design to prevent installation errors during assembly.
Selection Notes
Select this component when a P-channel MOSFET is required for low-side or high-side switching in space-constrained designs. Consider the thermal dissipation requirements of the SOT-23 package relative to the expected load current. Evaluate the gate threshold voltage compatibility with your microcontroller or logic driver levels to ensure proper turn-on and turn-off behavior.
Part Context
This part belongs to Comchip Technology's lineup of discrete semiconductor components, specifically focusing on small-signal and power MOSFETs. The series is engineered for cost-effective solutions in consumer electronics and industrial control applications. The K-HF suffix typically indicates halogen-free compliance, aligning with environmental standards for modern electronic manufacturing.
Replacement Considerations
Consult official substitution guides from Comchip Technology for verified equivalents. Generic replacements may differ in on-resistance or gate charge characteristics. Verify that any substitute maintains the same pinout configuration and exceeds the original voltage and current ratings for safe operation.
